Monte Carlo (MC) Related Papers

 

 

basic technique

 

Molecular Dynamics Technique

 

MC Transport Technique

 

 

 

 

 

 

 

 

 

hardware

 

2D LSSL Transport

Nanocarbon Ultracapacitor

 

Si/SiGe Transport

 

SEM Image Analysis

 

 

 

 

 

 

 

 

 

model

 

PRB93 Coupled

[pdf]

 

TED94

[pdf]

SSE95

[pdf]

 

APL07

[pdf]

 

 

 

 

 

 

 

 

 

applications

 

PRB93 Mag

[pdf]

NMDC10

[pdf]

 

APL93

[pdf]

 

 

JAP06

[pdf]

 

 

 

 

 

 

 

 

 

 

 

PRB93 Diff

[pdf]

Nanotech12

[pdf]

 

SST94

[pdf]

 

 

JVST07

[pdf]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PRB94

[pdf]

 

 

 

 

 

 

 

 

 

 

 

 

Publications

 

 

 

Home

 

 

 

 

I sometimes receive questions about the Monte Carlo technique. This chart is a quick overview for the papers so far. Basically, a physical model is developed for the given hardware first and then it is applied to various situations of interest. Results are compared with experiments.

 

If you want to create a Monte Carlo code from scratch, papers in the blue sections are good to start. If you are already familiar with the technique, you would skip to the yellow sections.

 

In the electron transport studies, the Monte Carlo is more appropriate for high fields, while the Boltzmann analysis is more appropriate for low fields. But sometimes, the other method is used for the undue case in the research phase. In the Monte Carlo is used for the zero field in T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "Monte Carlo Study of the Low-Temperature Mobility of Electrons in a Strained Si Layer Grown on a Si1-xGex Substrate," Phys. Rev. B 49 (3), 1875-1881 (1994), while the Boltzmann analysis is used for the high fields in T. Yamada and J. Sone, "High-Field Electron Transport in Quantum Wires Studied by Solution of the Boltzmann Equation," Phys. Rev. B 40 (9), 6265- 6271 (1989).

 

Monte Carlo (MC) Related Papers

 

 

 

basic technique

 

Monte Carlo transport simulation

hardware

 

Electron Transport in 2D LSSL

2D molecular dynamics MC model

PRB93 Coupled

T. Yamada and D. K. Ferry, "Coupled Molecular-Dynamics Monte Carlo Study of the Transport Properties of Lateral Surface Superlattices," Phys. Rev. B 47 (11), 6416-6426 (1993).

applications

PRB93 Mag

T. Yamada and D. K. Ferry, "Magnetotransport Properties of Lateral Surface Superlattices by Molecular-Dynamics Monte-Carlo Simulation," Phys. Rev. B 47 (3), 1444-1452 (1993).

 

PRB93 Diff

T. Yamada and D. K. Ferry, "Monte Carlo Simulation of Diffusion of Interacting Electrons in Lateral Surface Superlattices," Phys. Rev. B 48 (11), 8076-8082 (1993).

 

 

 

hardware

 

Nanocarbon Ultracapacitor

2D molecular dynamics MC model

PRB93 Coupled

T. Yamada and D. K. Ferry, "Coupled Molecular-Dynamics Monte Carlo Study of the Transport Properties of Lateral Surface Superlattices," Phys. Rev. B 47 (11), 6416-6426 (1993).

applications

NMDC10

A. Orphanou, T. Yamada*, and C. Y. Yang, "Modeling carbon nanotube ultracapacitor," IEEE Nanotechnology Materials and Devices Conference 2010 (invited, NMDC 2010), Monterey, CA, Oct. 12-15, 2010. (*corresponding author)

 

Nanotech12

A. Orphanou*, T. Yamada*, and C. Y. Yang, "Modeling of Carbon Nanotube Ultracapacitor," Nanotechnology 23 (9), 095401 (2012). (*corresponding authors)

 

 

 

hardware

 

Electron and Hole Transport in Si/SiGe

electron transport MC model

TED94

T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "In-Plane Transport Properties of Si/Si1-xGex Structure and Its FET Performance by Computer Simulation," IEEE Trans. Electron Devices 41 (19), 1513-1522 (1994).

applications

APL93

H. Miyata, T. Yamada, and D. K. Ferry, "Electron Transport Properties of a Strained Si layer on a relaxed Si1-xGex Substrate by Monte Carlo Simulation," Appl. Phys. Lett. 62 (21), 2661-2663 (1993).

 

SST94

T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "Velocity Overshoot in a Modulation Doped Si/ Si1-xGex Structure," Semicond. Sci. Technol. 9 (5S), 775- 777 (1994).

 

PRB94

T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "Monte Carlo Study of the Low-Temperature Mobility of Electrons in a Strained Si Layer Grown on a Si1-xGex Substrate," Phys. Rev. B 49 (3), 1875-1881 (1994).

 

 

 

hole transport MC model

SSE95

T. Yamada and D. K. Ferry, "Monte Carlo Simulation of Hole Transport in Strained Si1-xGex," Solid State Electronics 38 (4), 881-890 (1995).

 

 

 

hardware

 

SEM Image Analysis

SEM image MC

model

APL07

M. Suzuki, T. Yamada, and C. Y. Yang, "Monte Carlo Simulation of SEM Bright-contrast Images of Suspended Carbon Nanofibers," Appl. Phys. Lett. 90 (8), 083111 (2007) (with NASA, Hitachi, and SCU)

applications

JAP06

M. Suzuki, Y. Ominami, Q. Ngo, T. Yamada, A. M. Cassell, and C. Y. Yang, "Bright Contrast Imaging of Carbon Nanofiber-substrate Interface," J. Appl. Phys. 100 (10), 104305 (2006). (with NASA, Hitachi, and SCU)

 

JVSTB07

M. Suzuki, Q. Ngo, H. Kitsuki, K. Gleason, Y. Ominami, C. Y. Yang, T. Yamada, A. M. Cassell, and J. Li, "Bright-field transmission imaging of carbon nanofibers on bulk substrate using conventional scanning electron microscopy," J. Vac. Sci. Technol. B 25 (5)1615-1621 (2007). (with NASA, Hitachi, and SCU)

 

 

 

 

 

 

 

 

 

 

 

Comparison of Boltzmann vs Monte Carlo (MC) methods in electron transport studies

 

 

Elastic scattering via AC phonon or impurity

Inelastic scattering such as OP phonon

Boltzmann

quite common, a lot of papers

uncommon, very few papers

 

T. Yamada and J. Sone, "High-Field Electron Transport in Quantum Wires Studied by Solution of the Boltzmann Equation," Phys. Rev. B 40 (9), 6265- 6271 (1989). Cited.

MC

uncommon, very few papers,

 

T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "Monte Carlo Study of the Low-Temperature Mobility of Electrons in a Strained Si Layer Grown on a Si1-xGex Substrate," Phys. Rev. B 49 (3), 1875-1881 (1994).

quite common, a lot of papers

 

 

In the electron transport studies, the Monte Carlo is more appropriate for high fields, while the Boltzmann analysis is more appropriate for low fields. But sometimes, the other method is used for the undue case in the research phase. In the Monte Carlo is used for the zero field in T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "Monte Carlo Study of the Low-Temperature Mobility of Electrons in a Strained Si Layer Grown on a Si1-xGex Substrate," Phys. Rev. B 49 (3), 1875-1881 (1994), while the Boltzmann analysis is used for the high fields in T. Yamada and J. Sone, "High-Field Electron Transport in Quantum Wires Studied by Solution of the Boltzmann Equation," Phys. Rev. B 40 (9), 6265- 6271 (1989).